Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics |
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Authors: | JPM Serbena JY Huang D Ma ZY Wang IA Hümmelgen |
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Affiliation: | 1. Group of Organic Optoelectronic Devices, Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, PR 81531-990 Curitiba, Brazil;2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022, PR China;3. Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, Ontario, Canada K1S 5B6 |
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Abstract: | In this work we present a permeable-base transistor consisting of a 60 nm thick N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a Ca/Al/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm, the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, ~2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation. |
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