Effects of silicon incorporation on composition,structure and electric conductivity of cubic boron nitride thin films |
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Authors: | J Ying XW Zhang YM Fan HR Tan ZG Yin |
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Affiliation: | Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing, 100083, People''s Republic of China |
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Abstract: | We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si–N bonds, and no evidence of the existence of Si–B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples. |
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