Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector |
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| Authors: | Yasuo Koide M.Y. Liao M. Imura |
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| Affiliation: | 1. Sensor Materials Center (SenMC), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;2. Nanotechnology Innovation Center (NICe), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;3. International Center for Young Scientist (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
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| Abstract: | Photoconductivity gain (PG) and persistent photoconductivity (PPC) properties observed in diamond photodetector are theoretically explained by solving rate equations which describe capture and emission processes of photo-generated hole and electron through a boron acceptor and a hole trap in a diamond epilayer and a nitrogen donor in a diamond substrate. Formation of one-sided pn-junction between the epilayer and substrate and slow hole capture rate of acceptor and hole trap levels provide accumulation of photo-generated hole in the epilayer, which produces the PG larger than the ideal responsivity. The PPC current after turning off the deep ultraviolet light is interpreted as due to the slow hole capture rate of the acceptor and trap levels. |
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