Basic parameters and models in simulation of CVD diamond devices

In this paper, we present development TCAD Sentaurus platform design for high voltage and high temperature CVD diamond devices. For the first time, in this work we detail some of the models and parameters used to simulate CVD diamond device in range of 300 K to 700 K. We discuss in particular temperature dependence of each model. The results are important in order to study and design CVD diamond devices operated at high temperature.