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Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films
Authors:S. Ghodbane  D. Ballutaud  F. Omnès  C. Agnès
Affiliation:1. Institut Néel-CNRS, Dpt. Nanosciences 25, Av des Martyrs 38042 Grenoble Cedex 09, France;2. ρ-BeSt diamond Coating GmbH, Exlgasse 20a, 6020 Innsbruck, Austria;3. GEMaC-UMR 8635 CNRS, 1 place A. Briand, 92195 Meudon Cedex, France
Abstract:In this work, we have used X-ray photoelectron spectroscopy (XPS) to investigate the nature of surface adsorbed species and their sensitivity to the boron concentration [B] in two sets of as-grown diamond films: homoepitaxial {111} and polycrystalline. These sets cover each one at least three of the four doping ranges: low doping (5 × 1016 < [B] < 1.5 × 1019 cm? 3), high doping (1.5 × 1019 < [B] < 3 × 1020 cm? 3), heavy doping (3 × 1020 < [B] < 2 × 1021 cm? 3), and phase separation ([B] > 2 × 1021 cm? 3). The results are compared to those we have previously obtained on {100} homoepitaxial films in the same doping ranges.A detailed description of both the nature and the relative concentrations of the main surface chemical species on every set of films is reported. Besides the usual CHx bonds on the diamond surface, the following oxygen-related groups: Ether (C–O–C), hydroxyl (C–OH, only on polycrystalline films), carbonyl (> C=O) and carboxyl (HO–C=O) have been found on the surface of grown diamond films, upon spontaneous oxidation under air (no oxidation treatment has been applied). The evolution of each surface chemical group according to the boron concentration in the films is.
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