Very high temperature annealing effect on amorphous carbon films grown on refractory oxide substrates by pulsed laser deposition |
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| Authors: | Takuya Noguchi Toshihiro Shimada Takashi Chiba Masao Terada Tetsuya Hasegawa |
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| Affiliation: | 1. Department of Chemistry, The University of Tokyo, Tokyo, 113-0033, Japan;2. Advanced Device Laboratory, RIKEN Advanced Science Institute, Wako, 351-0198, Japan;3. R&D Center, Sakaguchi E.H. VOC Corp., Tokyo, 101-0021, Japan |
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| Abstract: | We have carried out very high temperature heat treatment at 1400–2700 °C of about 10 nm-thick amorphous carbon thin films deposited on refractory substrates MgO, Al2O3, and yttria-stabilized zirconia (YSZ) using pulsed laser deposition techniques. After the annealing, a few nanometer scale sp2 crystallization of the films and a large corrugation with a height of more than 1 μm were observed by Raman spectroscopy analysis and optical/atomic force microscopes, respectively. The corrugation is probably caused by the formation of gases at the film/substrate interface during the heat treatment. |
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