Effect of field-annealing on magnetostriction and tunneling magnetoresistance of Co/AlOx/Co/IrMn junctions |
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| Authors: | Yuan-Tsung Chen Jiun-Yi Tseng C.C. Chang W.C. Liu Jason Shian-Ching Jang |
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| Affiliation: | 1. Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC;2. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, ROC;3. Department of Mechanical Engineering; Institute of Materials Science & Engineering, National Central University, Chung-Li 320, Taiwan, ROC;1. Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Brno, Czech Republic;2. Department of Physics, VSB-Technical University of Ostrava, Ostrava, Czech Republic;3. Regional Material Science and Technological Centre, VSB-Technical University of Ostrava, Ostrava, Czech Republic;4. Regional Centre of Advanced Technologies, Palacky University in Olomouc, Olomouc, Czech Republic;1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan;2. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Japan;3. Kanagawa Academy of Science and Technology, Kawasaki, Japan;4. Magnetic Materials Center, National Institute for Materials Science, Tsukuba, Japan;5. CREST, Japan Science and Technology Agency, Kawaguchi, Japan;1. Institute of Physics, West Pomeranian University of Technology, Al. Piastow 48, 70-311 Szczecin, Poland;2. Solid State Physics, Department of Physics, University of Athens, Panepistimiopolis, 15 784 Zografos, Athens, Greece;3. Institute of Chemical and Environment Engineering, West Pomeranian University of Technology, K. Pulaskiego 10, 70-322 Szczecin, Poland;1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong;2. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan;3. Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T2N2, Canada;1. Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea;2. Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea;3. Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea |
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| Abstract: | The magnetostriction (λs) and tunneling magnetoresistance (TMR) of two Co/AlOx/Co/IrMn MTJ systems that were deposited on Si(1 0 0) and glass substrate were examined at RT and field-annealing with various thicknesses of AlOx. One structure was a Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, and the other was a glass/Co/AlOx/Co/IrMn system. The experimental results reveal that, in the Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, the ratio of TMR is maximal under the field-annealing condition, and is optimal at an AlOx thickness of 26 Å as well as in the RT condition. EDS analysis demonstrates that, these results are related to the distribution of Co and O atoms, because the oxidation of AlOx is most extensive at a thickness of 26 Å. In the glass/Co/AlOx/Co/IrMn system, λs does not significantly vary under the RT condition; however, λs is maximized (?20 ppm) by field-annealing at an AlOx thickness of 17 Å. The abundance of Co and O in the system dominates the behavior of λs, according to EDS analysis. Finally, the minimum value of λs and the maximum ratio of TMR are ?8 ppm and 60%, respectively, at an AlOx thickness of 26 Å under the field-annealing condition. |
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