| 利用湿法刻蚀的方式制备黑硅 |
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| 引用本文： | 张安元,吴志明,赵国栋,姜晶,郭振宇.利用湿法刻蚀的方式制备黑硅[J].现代电子技术,2011,34(18):133-136. |
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| 作者姓名： | 张安元 吴志明 赵国栋 姜晶 郭振宇 |
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| 作者单位： | 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 国家自然科学基金资助项目(61021061); 电子薄膜与集成器件国家重点实验室开放资助基金(KFJJ200806) |
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| 摘 要： | 采用一种简便的方法制备出具有很好光吸收性能的黑硅材料，利用化学气象沉积和光刻的方式在硅片（100）表面形成圆形Si3N4掩膜，然后采用两种湿法刻蚀相结合方式来制备黑硅材料。首先采用碱刻蚀的方式对硅片进行各向异性刻蚀，刻蚀完成后在硅片表面形成尖锥形貌；后期利用金纳米颗粒作为催化剂，采用酸刻蚀的方式对硅片表面进行改性，在硅片表面形成多孔结构。这种黑硅材料在250～1000nm波段的光吸收率可以达到95％以上。
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| 关 键 词： | 黑硅材料 湿法刻蚀 表面形貌 光吸收率 |
Preparation of Black Silicon by Means of Wet Etching |
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| ZHANG An-yuar,WU Zhi-ming,ZHAO Guo-dong,JIANG Jing,GUO Zhen-yu.Preparation of Black Silicon by Means of Wet Etching[J].Modern Electronic Technique,2011,34(18):133-136. |
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| Authors: | ZHANG An-yuar WU Zhi-ming ZHAO Guo-dong JIANG Jing GUO Zhen-yu |
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| Affiliation: | ZHANG An-yuan,WU Zhi-ming,ZHAO Guo-dong,JIANG Jing,GUO Zhen-yu(State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | A simple method of preparing black silicon(BS) with high optical absorptivity is introduced.During the preparation,the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon(100),and then two kinds of wet etching are used to prepare the black silicon material.The first step is that the anisotropic etching on a silicon wafer is performed with the method of alkali etching to form the tip morphology on the silicon surface.After that,some gold nanoparticles ... |
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| Keywords: | black silicon material wet etching surface morphology optical absorptivity |
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