首页 | 本学科首页   官方微博 | 高级检索  
     


Development of anodic coatings on aluminium under sparking conditions in silicate electrolyte
Authors:F Monfort  E Matykina  GE Thompson  K Shimizu
Affiliation:a Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Sackville Street, Manchester M60 1QD, UK
b Graduate Engineering School, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan
c University Chemical Laboratory, Keio University, 4-1-1 Hiyoshi, Yokohama 223, Japan
Abstract:Spark anodizing of aluminium at 5 A dm−2 in sodium metasilicate/potassium hydroxide electrolytes is studied, with particular emphasis on the mechanism of coating growth, using transmission electron microscopy and surface analytical techniques, with coatings typically 10 μm, or more, thick. Two-layered coatings develop by deposition of an outer layer based on amorphous silica, associated with low levels of alkali-metal species, at the coating surface and growth of an inner, mainly alumina-based, layer, with an amorphous region next to the metal/coating interface. Formation of crystalline phases in the inner layer, mainly γ-Al2O3, with some α-Al2O3 and occasional δ-Al2O, is assisted by local heating, and possibly also by ionic migration processes, arising from the rapid coating growth at sites of breakdown. Due to local access of electrolyte species in channels created by breakdown events, the silicon content in the inner coating regions varies widely, ranging from negligible levels to about 10 at.%. Silica deposition at the coating surface and formation of Al2SiO5 and Al6Si2O13 phases is promoted by increased time of anodizing and concentration of metasilicate in the electrolyte. However, at sufficiently high concentration of metasilicate and pH, when more extreme voltage fluctuations accompany breakdown, the two-layered nature of coatings is replaced by a mixture of aluminium-rich and silicon-rich regions throughout the coating thickness.
Keywords:A  Aluminium  C  Anodic films  C  Oxide coatings
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号