| GaAs超高速光调制器的研制 |
| |
| 引用本文： | 王明华,多田.GaAs超高速光调制器的研制[J].高技术通讯,1996,6(4):24-27. |
| |
| 作者姓名： | 王明华 多田 |
| |
| 作者单位： | [1]浙江大学半导体光电子学研究室 [2]日本东京大学 |
| |
| 基金项目： | 863计划,国家自然科学基金 |
| |
| 摘 要： | 从理论与实验两方面研究了ＧａＡｓ定向耦合型行波光调制器，首次报导了重掺杂ｎ＾＋型薄层对电场分量相当于导体，对磁场分量相当于绝缘体这一发现；首次提出了一种具有对称宽电极的新型结构，并研制成功开关电压为８．５Ｖ，微波折射率为３．６，在３０ＧＨｚ情况下传输损耗小于１０ｄＢ／ｃｍ，根据ｓ参数测试３ｄＢ带宽达到３２ＧＨｚ的行波调制器。
|
| 关 键 词： | 砷化镓 行波 调制器 |
The Research on GaAs Superhigh-speed Optical Modulator |
| |
| Wang Minghua, Wu Zhiwu, Yang Jianyi.The Research on GaAs Superhigh-speed Optical Modulator[J].High Technology Letters,1996,6(4):24-27. |
| |
| Authors: | Wang Minghua Wu Zhiwu Yang Jianyi |
| |
| Abstract: | The traveling wave directional coupler modulators on GaAs have been studied in theory and experiment. We found that the n+ layer can be treated as a Perfect conductor for electric field and as an insulator for magnetic field at first time. We proPOsed a new structure of traveling wave modulator with a symmetric and wide electrode. The device switch voltage is 8. 5V, microwave index is about 3. 6, the transmission loss is less than 10dB/cm at 30 GHz, and the 3dB optical modulation bandwidth is greater than 32 GHz (by the measured s-parameter). |
| |
| Keywords: | GaAs Traveling wave Modulator |
| 本文献已被 CNKI 维普 等数据库收录！ |
