New self-aligned T-gate InGaP/GaAs field-effect transistors grownby LP-MOCVD |
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Authors: | Lour W.-S. Chang W.L. Shih Y.M. Liu W.C. |
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Affiliation: | Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ. ; |
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Abstract: | This paper reports on self-aligned T-gate InGaP/GaAs FETs using n +/N+/δ(P+)/n structures. N+ -InGaP/δ(P+)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FETs together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm2 obtained from 2×100 (1×100) μm2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively |
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