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Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
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| Authors: | Mohamed Benyoucef Verena Zuerbig Johann P Reithmaier Tim Kroh Andreas W Schell Thomas Aichele Oliver Benson |
| Affiliation: | 1.Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Strasse 40, Kassel, 34132, Germany;2.Nano-Optik, Humboldt-Universität zu Berlin, Newtonstrasse 15, Berlin, 12489, Germany |
| Abstract: | ABSTRACT: The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400 [DEGREE SIGN]C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function. |
| Keywords: | III-V semiconductors Quantum dots Droplet epitaxy Single-photon emission Radiative lifetime 87.57.uh 78.67.Hc 78.55.-m 42.50.-p |
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