Distribution of trapped charges in SiO2 film of ap+-gate PMOS structure

To investigate the highly boron-doped SiO₂ film, p⁺ polysilicon-gate PMOSFETs and capacitors were fabricated using the same process as is used for surface-channel-type n⁺-gate devices, except for the gate-type doping. After the application of negatively biased Fowler-Nordheim (FN) stress, it was found that positive charges accumulate near the silicon/SiO₂ interface and electrons accumulate near the polysilicon/SiO₂ interface in p⁺-gate capacitors. DC hot carrier stress was applied to both PMOSFET gate types. The p⁺ gate's stress time dependence of I_sub is smaller than that of the n⁺ gate, and the electric field near the drain in the p⁺ -gate PMOSFET was found to be more severe than that of the n⁺ -gate device. The subthreshold slope of the p⁺-gated PMOSFET was improved and then degraded during the hot carrier stressing, while that of the n⁺-gated device did not significantly change. The actual change of V_th was larger than the value derived from Δ_gm using the channel-shortening concept. The idea of widely spreading and partially compensated electron distribution along with source-drain direction in the SiO₂ film, which assumes the existence of trapped holes in the p⁺-gate PMOSFET, is proposed to explain these phenomena