| 热退火对低温分子束外延GaAs材料深中心的影响 |
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| 引用本文： | 张砚华,范缇文,陈延杰,吴巨,陈诺夫,王占国. 热退火对低温分子束外延GaAs材料深中心的影响[J]. 功能材料与器件学报, 2000, 6(4): 369-371 |
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| 作者姓名： | 张砚华 范缇文 陈延杰 吴巨 陈诺夫 王占国 |
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| 作者单位： | 中国科学院半导体研究所材料科学实验室,北京,100083 |
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| 摘 要： | 利用光致瞬态电流谱（Ｏｐｔｉｃａｌ Ｔｒａｎｓｉｅｎｔ ＣｕｒｒｅｎｔＳｐｅｃｔｒｕｍＯＴＣＳ）研究了热退火对低温分子束外延ＧａＡｓ材料深中心的影响，实验结果表明原生和退火的ＬＴ－ＧａＡｓ中都存在三个主要的深中心ＬＴ１、ＬＴ２、ＬＴ２，退火后各峰的相对强度变化很大，特另ＩＬＴ１／ＩＬＴ３＝Ｃ由退火前的Ｃ〉〉１到退火后Ｃ〈〈１，退火温度越高，Ｃ值越小，这主要归因于热退火过程中砷的集聚与沉淀致使与砷反
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| 关 键 词： | 热退火 深能级中心 砷化镓 低温分子束外延 |
| 修稿时间： | 2000-07-24 |
Effects of thermally annealing on deep-levels of low temperature MBE GaAs |
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| ZHANG Yan-hua,FAN Ti-wen,CHEN Ting-jie,WU Ju,CHEN Nuo-fu,WANG Zhang-gou. Effects of thermally annealing on deep-levels of low temperature MBE GaAs[J]. Journal of Functional Materials and Devices, 2000, 6(4): 369-371 |
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| Authors: | ZHANG Yan-hua FAN Ti-wen CHEN Ting-jie WU Ju CHEN Nuo-fu WANG Zhang-gou |
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| Abstract: | The effects of thermally annealing on deep levels of low temperature MBE GaAs have been investigated by Optical Transient Current Spectrum (OTCS). There were three main deep level peaks LT 1, LT 2, LT 3 in the as-grown and annealed LT GaAs. The relative intensity of those peaks will change hugely after annealing. Gather and precipitation of arsenic by thermally annealing will decrease arsenic anti site defects As Ga and arsenic interstitial atom concentration that relative to LT 1 . In opposite, the LT 3 that relative to vacancy V Ga will increase. |
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| Keywords: | Thermaly annealling LT MBE GaAs Deep Level |
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