Effects of recombination parameters in pn indium phosphide solar cells |
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Authors: | Raj K. Jain Dennis J. Flood |
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Affiliation: | NASA Lewis Research Center Cleveland, Cleveland, OH 44135, USA |
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Abstract: | This work, using a numerical code PC-1D, describes the effects of surface and bulk recombination on the performance of p+n indium phosphide solar cells. It is shown that surface recombination velocity and minority carrier diffusion lengths play a dominant role in controlling the efficiency of p+n cells. In order to have an acceptable series resistance, a p+n cell must have an emitter that is thicker than a n+p cell emitter. Consequently the performance of a p+n cell is more sensitive to the front surface recombination velocity. Improved surface and bulk recombination parameters can lead to cell efficiencies in excess of 24% AMO at 25°C. |
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Keywords: | Efficiency Indium phosphide InP Solar cells Space applications |
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