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Proximity effects in electron beam lithography in SAL 601 resists on a Si-SiO2-Si substrate |
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| Authors: | A. Ouabbou J.P. Martinez F. Lalanne P. G rard J.L. Balladore |
| Affiliation: | aCEMES-LOE, CNRS, 29 rue. J. Marvig, 31055 Toulouse Cedex, France bCNET, BP 98, 38243 Meylan Cedex, France |
| Abstract: | A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source electron beam both lateral and depth evolution of the energy deposition are determined. Simulation of a line source is then achieved. Different geometries are modelled; the equidensity energy contours are obtained. The proximity effects are studied notably for isolated lines and arrays of lines and spaces. |
| Keywords: | Electron beam lithography Monte Carlo simulation SAL 601 resist Proximity effects |
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