| 氧化锌的能带工程 |
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| 引用本文： | 胡海华,王家玮.氧化锌的能带工程[J].材料导报,2009,23(19). |
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| 作者姓名： | 胡海华 王家玮 |
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| 作者单位： | 浙江大学城市学院,杭州,310015 |
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| 基金项目： | 浙江大学城市学院学习研究所与浙江大学城市学院教师科研基金 |
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| 摘 要： | ZnO由于具有3.4eV的宽直接禁带和60meV的高激子束缚能,近年来引起了研究者的广泛兴趣,被认为是制备室温或高温蓝光或紫外光发光二极管以及激光二极管的理想材料.ZnO的能带工程是发展高效率的ZnO发光器件的关键,这已经成为ZnO领域的研究热点.近年来,大量的研究表明,可以通过ZnO与Mgo或BeO形成MgZnO或BeZnO合金来增大ZnO的禁带宽度,通过ZnO与CdO形成CdZnO合金来减小ZnO的禁带宽度,从而在保持单一六方结构的情况下实现了室温禁带宽度在1.8～10.6eV范围内的可调节.总结了ZnO能带工程的国内外研究进展,系统地介绍了MgZnO、BeZnO和CdZnO合金、ZnO基量子阱和超晶格的制备方法、晶体结构、光学性能等.
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| 关 键 词： | 氧化锌 能带工程 禁带宽度 |
Band Gap Engineering of ZnO |
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| HU Haihua,WANG Jiawei.Band Gap Engineering of ZnO[J].Materials Review,2009,23(19). |
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| Authors: | HU Haihua WANG Jiawei |
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| Affiliation: | HU Haihua,WANG Jiawei (College of City,Zhejiang University,Hangzhou 310015) |
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| Abstract: | Recently, ZnO has attracted considerable attention as a candidate for high temperature blue and ultraviolet light-emitting diodes and laser diodes due to its large direct band-gap of ~3.4eV and high free-exciton bin-ding energy of ~60meV. A critical element for the development of ZnO based optoelectronic devices is the band gap engineering of ZnO through alloying. MgZnO and BeZnO alloys have been proposed to enlarge the band gap of ZnO, and the CdZnO alloy to narrow the band gap of ZnO. In the case of the w... |
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| Keywords: | MgZnO BeZnO CdZnO |
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