Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes |
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Authors: | XiaoLi Da GuangDi Shen Chen Xu DeShu Zou YanXu Zhu Jia Zhang |
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Affiliation: | (1) Institute of Electronic Information and Control Engineering, Beijing Optoelectronic Technology Lab, Beijing University of Technology, Beijing, 100124, China |
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Abstract: | In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides
before and after fabricating metal reflector on p-GaN. The SiO2/SiN
x
dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal
reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the
air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased
by as high as 10.2% after the deposition of 2 pairs of SiO2/SiN
x
dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result
indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based
LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the
surface.
Supported by the National Basic Research Program of China (Grant No. 2006CB604902), and the Funding Project for Academic Human
Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality (Grant No. 05002015200504) |
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Keywords: | GaN light emitting diodes SiO2/SiN x dielectric film reflectors plasma enhanced chemical vapor deposition |
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