| Sol-gel法制备SrTiO_3薄膜的电阻开关性能研究 |
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| 引用本文： | 苏朝辉,张婷,王继鹏,张盈,张伟风. Sol-gel法制备SrTiO_3薄膜的电阻开关性能研究[J]. 电子元件与材料, 2008, 27(12) |
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| 作者姓名： | 苏朝辉 张婷 王继鹏 张盈 张伟风 |
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| 作者单位： | 河南大学,物理与电子学院,光子与光子技术重点实验室,微系统物理研究所,河南,开封,475004 |
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| 基金项目： | 河南省高校杰出科研人才创新工程项目 |
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| 摘 要： | 采用sol-gel法制作了28nm厚的SrTiO3薄膜和Au/SrTiO3/LaNiO3/Si(100)三明治结构的器件,并研究其物理性能。结果显示:室温下,用直流电压可以使薄膜的电阻在高低阻态间进行转换。最大的电阻变化率约为10309。对I-V特性的分析,发现在高阻态时,有空间电荷限制电流机制(SCLC)和肖特基势垒导电机制存在。应用在高场区有非对称电子陷阱中心的空间电荷限制电流理论,解释了这种电阻开关现象。
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| 关 键 词： | 电阻开关 交流阻抗谱 肖特基发射 空间电荷限制电流 电子陷阱 |
Study on the resistive switching properties of SrTiO_3 thin films prepared by sol-gel method |
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| SU Zhao-hui,ZHANG Ting,WANG Ji-peng,ZHANG Ying,ZHANG Wei-feng. Study on the resistive switching properties of SrTiO_3 thin films prepared by sol-gel method[J]. Electronic Components & Materials, 2008, 27(12) |
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| Authors: | SU Zhao-hui ZHANG Ting WANG Ji-peng ZHANG Ying ZHANG Wei-feng |
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| Affiliation: | SU Zhao-hui,ZHANG Ting,WANG Ji-peng,ZHANG Ying,ZHANG Wei-feng (Key Laboratory of Photonic Technique for Information,Institute of Microsystem Physics , School of Physics & Electronics,Henan University,Kaifeng 475004,Henan Province,China) |
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| Abstract: | The 28 nm thicks SrTiO3 (STO) thin films on LaNiO3/Si(100) substrate were prepared by sol-gel method to form Au/SrTiO3/LaNiO3/Si(100) sandwich structure device. Its physical properties were studied. The results show that direct current voltage can switch the resistance of the thin films between low and high state at room temperature. The maximum change rate between these two resistance states is about 10 309. Analyses of I-V behaviors were executed ,and it is suggested that the current-voltage characteristi... |
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| Keywords: | resistive switch AC impedance spectra Schottky emission space-charge limited currents (SCLC) electron traps |
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