A new hot carrier degradation law for MOSFET lifetime prediction |
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Authors: | B Marchand G Ghibaudo F Balestra G Gugan S Deleonibus |
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Affiliation: | B. Marchand, G. Ghibaudo, F. Balestra, G. Guégan,S. Deleonibus |
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Abstract: | We propose in this paper a new hot carrier degradation law for a reliable MOSFET lifetime prediction. We show that the proposed exponential function can describe all kind of curve concavity (saturating or non-saturating shapes) and can fit very well with the experimental data for the whole duration of the stress. Finally, it gives a more accurate lifetime value as compared to previous modelings because it accounts for the concavity of the saturating degradation law. |
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