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Effects of niobium content on electrical and mechanical properties of (Na0.85K0.15)0.5Bi0.5Ti(1-x)Nb x O3 thin films |
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| Authors: | Li Xujun Pan Yong Gong Yueqiu Huang Renjie Liao Jiajia Xie Shuhong Zhou Yichun Gao Xingsen |
| Affiliation: | 1. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, 411105, China 2. Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan, 411105, China 3. Institute for Advanced Materials, School of Physics and Telecommunications Engineering, South China Normal University, Guangzhou, 510631, China |
| Abstract: | (Na0.85K0.15)0.5Bi0.5Ti(1-x)Nb x O3 (NKBT-N100x) thin films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal–organic decomposition method and annealed in oxygen atmosphere at 750 °C. The effects of niobium concentration on the microstructures, ferroelectric, piezoelectric, leakage current and mechanical properties of the NKBT-N100x (x = 0, 0.01, 0.03, 0.05) thin films have been investigated in detail. The NKBT-3N thin film has the largest remnant polarization (7 μC/cm2) and statistically averaged d 33eff (140 pm/V), the smallest leakage current, elasticity modulus (102.0 Gpa), hardness (5.1 Gpa) and residual stress (297.0 Mpa). The evaluation of residual stresses of these thin films will offer useful guidelines of safe working condition for their potential application in microelectromechanical system. |
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