Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition |
| |
| Authors: | S. Due as, H. Cast n, H. Garcí a, J. Barbolla, K. Kukli, J. Aarik, M. Ritala,M. Leskel |
| |
| Affiliation: | aDepartamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Universidad de Valladolid, Campus “Miguel Delibes”, 47011 Valladolid, Spain;bInstitute of Experimental Physics and Technology, University of Tartu, Tähe 4, 51010 Tartu, Estonia;cDepartment of Chemistry, University of Helsinki, P. O. Box 55, FIN-00014 Helsinki, Finland;dInstitute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia |
| |
| Abstract: | An electrical characterization comparative analysis between Al/HfO2/n-Si and Al/Hf-Si-O/n-Si samples has been carried out. Hafnium-based dielectric films have been grown by means of atomic layer deposition (ALD). Interface quality have been determined by using capacitance–voltage (C–V), deep level transient spectroscopy (DLTS) and conductance transient (G-t) techniques. Our results show that silicate films exhibit less flat-band voltage shift and hysteresis effect, and so lower disordered induced gap states (DIGS) density than oxide films, but interfacial state density is greater in Hf–Si–O than in HfO2. Moreover, a post-deposition annealing in vacuum under N2 flow for 1 min, at temperatures between 600 and 730 °C diminishes interfacial state density of Hf–Si–O films to values measured in HfO2 films, without degrade the interface quality in terms of DIGS. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
