| 溅射靶功率对氮化碳薄膜结构的影响 |
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| 引用本文： | 高鹏,徐军,朴勇,丁万煜,邓新绿,王德和,董闯. 溅射靶功率对氮化碳薄膜结构的影响[J]. 真空科学与技术学报, 2005, 25(5): 350-354 |
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| 作者姓名： | 高鹏 徐军 朴勇 丁万煜 邓新绿 王德和 董闯 |
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| 作者单位： | 大连理工大学三束材料改性国家重点实验室,大连,116024 |
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| 摘 要： | 利用双放电腔微波ECR等离子体增强非平衡磁控溅射技术,在Si(100)上制备氮化碳薄膜,并对薄膜进行了拉曼(Raman)、原子力显微镜(AFM)、X射线光电子谱(XPS)等结构的表征.发现溅射靶功率对制膜工艺、薄膜的结构和表面形貌产生很大影响.随着溅射靶功率的增大,薄膜的沉积速率减小,表面粗糙度增大,薄膜结构中的sp2含量增加.
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| 关 键 词： | 非平衡磁控溅射 拉曼光谱 X射线光电子谱 原子力显微镜 |
| 文章编号： | 1672-7126（2005）05-0350-05 |
| 收稿时间： | 2005-01-10 |
| 修稿时间： | 2005-01-10 |
Influence of Sputtering Power on Microstructure of Carbon Nitride Films |
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| Gao Peng,Xu Jun,Piao Yong,Ding Wanyu,Deng Xinlu,Wang Dehe,Dong Chuang. Influence of Sputtering Power on Microstructure of Carbon Nitride Films[J]. JOurnal of Vacuum Science and Technology, 2005, 25(5): 350-354 |
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| Authors: | Gao Peng Xu Jun Piao Yong Ding Wanyu Deng Xinlu Wang Dehe Dong Chuang |
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| Affiliation: | State Key Lztboratory of Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024, China |
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| Abstract: | Carbon nitride films were grown on Si(100) wafer by twin-microwave,electron-cyclotron-resonance(ECR) plasma source enhanced,unbalance magnetron sputtering.The films were characterized with Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),and atomic force microscopy(AFM).The results show that the sputtering power significantly affects its microstructures,its stoichiometry and its surface morphology.For instance,as the sputtering power increases the deposition rate decreases,the film surface roughens and sp~2 content rises up.Moreover,high sputtering power induces a transformation from sp~3 C-N to sp~2 C-N,which results in considerable density decrease of sp~3 C-N. |
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| Keywords: | Unbalance magnetron sputtering Raman spectroscopy X-ray photoelectron spectroscopy Atomic force microscopy |
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