| 12~18 GHz GaAs MMIC低噪声放大器设计 |
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| 引用本文： | 孙博文,王 磊,陈 庆,方 堃,杨漫菲.12~18 GHz GaAs MMIC低噪声放大器设计[J].太赫兹科学与电子信息学报,2019,17(2):348-351. |
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| 作者姓名： | 孙博文 王 磊 陈 庆 方 堃 杨漫菲 |
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| 作者单位： | School of Electronic Engineering，University of Electronic Science and Technology of China，Chengdu Sichuan 611731，China,School of Electronic Engineering，University of Electronic Science and Technology of China，Chengdu Sichuan 611731，China,School of Electronic Engineering，University of Electronic Science and Technology of China，Chengdu Sichuan 611731，China,School of Electronic Engineering，University of Electronic Science and Technology of China，Chengdu Sichuan 611731，China and School of Electronic Engineering，University of Electronic Science and Technology of China，Chengdu Sichuan 611731，China |
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| 摘 要： | 采用GaAs工艺设计了一个12~18 GHz毫米波单片集成电路(MMIC)低噪声放大器(LNA)。采用三级单电源供电放大结构，运用最小噪声匹配设计、共轭匹配技术和负反馈结构，同时满足了噪声系数、增益平坦度和输出功率等要求。仿真表明：在12~18 GHz的工作频带内，噪声系数为1.15~1.41 dB，增益为27.9~29.1 dB，输出1 dB压缩点达到15 dBm，输入、输出电压驻波比(VSWR)系数小于1.72。
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| 关 键 词： | Ku波段 毫米波单片集成电路 低噪声放大器 GaAs工艺 |
| 收稿时间： | 2017/7/7 0:00:00 |
| 修稿时间： | 2017/12/21 0:00:00 |
Design of 12-18 GHz MMIC Low Noise Amplifier in GaAs pHEMT process |
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| SUN Bowen,WANG Lei,CHEN Qing,FANG Kun and YANG Manfei.Design of 12-18 GHz MMIC Low Noise Amplifier in GaAs pHEMT process[J].Journal of Terahertz Science and Electronic Information Technology,2019,17(2):348-351. |
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| Authors: | SUN Bowen WANG Lei CHEN Qing FANG Kun and YANG Manfei |
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| Abstract: | This paper presents a 12-18 GHz Low Noise Amplifier(LNA) Monolithic Microwave Integrated Circuit(MMIC) in GaAs process, and the design of this LNA layout is verified in ADS EM simulation. This LNA circuit uses single DC power supply. In the design of matching network, the minimum noise matching design, conjugate matching technology and the negative feedback structure are utilized to meet the requirement of low noise, gain flatness and power output. The simulation indicates that in the band of 12-18 GHz, the Noise Figure(NF) of LNA varies from 1.15 dB to 1.41 dB, and power transmission gain is 27.9-29.1 dB, the 1 dB compression power point is 15 dBm, and the Voltage Standing Wave Ratio(VSWR) of input and output is less than 1.72. |
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