| SiO_2薄膜致密性的表征 |
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| 引用本文： | 张富,荣丽梅,袁之光,郭宇恒,周泳,杜江峰. SiO_2薄膜致密性的表征[J]. 微电子学, 2011, 41(5) |
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| 作者姓名： | 张富 荣丽梅 袁之光 郭宇恒 周泳 杜江峰 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 论述了表征SiO2薄膜致密性的三种方法:红外光谱法、折射率法和腐蚀速率法,分析了它们各自的特点。制备了不同衬底和不同工艺的三个热氧化SiO2薄膜样品,利用红外光谱法和折射率法对样品进行了对比测试。结果表明,采用红外光谱法表征SiO2薄膜的致密性时,主特征吸收峰频率不仅与薄膜致密性相关,还与样品的厚度和衬底等因素有关;而折射率法受这些因素的影响较小,是表征SiO2薄膜致密性较为适用的方法。
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| 关 键 词： | SiO2薄膜 致密性 红外光谱法 折射率法 |
Characterization of Densification for SiO_2 Film |
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| ZHANG Fu,RONG Limei,YUAN Zhiguang,GUO Yuheng,ZHOU Yong,DU liangfeng. Characterization of Densification for SiO_2 Film[J]. Microelectronics, 2011, 41(5) |
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| Authors: | ZHANG Fu RONG Limei YUAN Zhiguang GUO Yuheng ZHOU Yong DU liangfeng |
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| Affiliation: | ZHANG Fu,RONG Limei,YUAN Zhiguang,GUO Yuheng,ZHOU Yong,DU Jiangfeng(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Electronics Science & Technology of China,Chengdu 610054,P.R.China) |
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| Abstract: | Three ways to characterize the compactness of SiO2 film,including infrared spectroscopy,refractive index and etch rate methods,were discussed,and their characteristics were analyzed.Three samples with different substrates were prepared with different processes.These samples were measured using infrared spectrometer and spectroscopic ellipsometry.It was found that,with infrared spectroscopy,the main IR peak frequency not only depended on the compactness of SiO2,but also on its thickness and substrate,etc.,wh... |
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| Keywords: | SiO2 film Densification Infrared Spectroscopy Refractive index method |
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