| 基于密度梯度理论的MOS量子隧穿解析模型 |
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| 引用本文： | 吕阳,刘垚,余志平.基于密度梯度理论的MOS量子隧穿解析模型[J].微电子学,2011,41(6). |
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| 作者姓名： | 吕阳 刘垚 余志平 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084 |
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| 基金项目： | 国家重点基础研究发展(973)计划基金资助项目:纳米尺度硅集成电路器件与工艺基础研究(2006CB302705); 超低功耗高性能集成电路器件与工艺基础研究(2011CBA00604) |
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| 摘 要： | 提出了一种基于物理的MOS电容超薄氧化层量子隧穿解析模型,量子力学效应在应用奇异微扰法求解密度梯度方程时得以体现.将泊松方程和经量子修正的电子势方程同时求解,得出电子和静电势在垂直于沟道方向的分布.结果反映出量子效应明显不同于经典物理学的预测.对解析解结果和精确的数值模拟进行比较,结果表明,在栅极偏压和氧化层厚度的较大变化范围内,二者都能很好地吻合.
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| 关 键 词： | 量子隧穿 解析模型 密度梯度方程 奇异微扰法 |
A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient |
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| L Yang
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LIU Yao
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YU Zhiping.A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient[J].Microelectronics,2011,41(6). |
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| Authors: | L Yang LIU Yao YU Zhiping |
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| Affiliation: | L(U) Yang
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LIU Yao
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YU Zhiping |
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| Abstract: | A physics-based analytical model for quantum tunneling through ultra-thin oxide in MOS capacitor was developed.Quantum mechanical effects were demonstrated by solving density gradient equations with singular perturbation method.By simultaneously solving Poisson's equation and quantum-corrected electron potential equation,electron and electrostatic potential distributions perpendicular to the channel were obtained.Results captured the features of quantum effects and were shown to be quite different from what... |
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| Keywords: | Quantum tunneling Analytical model Density gradient equation Singular perturbation method |
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