| VDMOS正向偏压安全工作区的界定与优化 |
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| 引用本文： | 王磊,张金艺.VDMOS正向偏压安全工作区的界定与优化[J].微电子学,2011,41(5). |
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| 作者姓名： | 王磊 张金艺 |
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| 作者单位： | 上海大学微电子中心,上海,200072 |
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| 摘 要： | 外界温度变化对VDMOS安全工作区域有很大影响,若不能很好地解决热散效应,工作环境温度的升高将会对器件的稳定性、可靠性及使用寿命产生不良影响。为了避免器件在实际使用过程中发生瞬态损坏及永久性损坏,安全工作区域需要依据应用器件的实际工作条件重新界定优化。以高压增强型VDMOS-GM180作为载体,根据测试器件的热阻、工作电流、工作电压等具体参数,对实际应用环境下的安全工作区域进行界定及优化,并对此策略进行验证。
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| 关 键 词： | VDMOS 安全工作区 热阻 |
Definition and Optimization of VDMOS FBSOA |
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| WANG Lei,ZHANG Jinyi.Definition and Optimization of VDMOS FBSOA[J].Microelectronics,2011,41(5). |
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| Authors: | WANG Lei ZHANG Jinyi |
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| Affiliation: | WANG Lei,ZHANG Jinyi(Microelectronics R & D Center,Shanghai University,Shanghai 200072,P.R.China) |
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| Abstract: | A novel method for optimized selection of VDMOS safe operation area was proposed.Due to effects of temperature on device performance,the safe operation area varied with different operation temperatures.Safe operation area for different devices was analyzed based on thermal resistance,conductive current and voltage.Safe operation area in actual application environment was defined and optimized to validate the proposed method. |
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| Keywords: | VDMOS Safe operation area Thermal resistance |
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