| 氧化锌基TFT稳定性研究进展 |
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| 引用本文： | 吴为敬,许志平,颜骏,赖志成. 氧化锌基TFT稳定性研究进展[J]. 微电子学, 2011, 41(6) |
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| 作者姓名： | 吴为敬 许志平 颜骏 赖志成 |
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| 作者单位： | 华南理工大学材料科学和工程学院,广州,510641 |
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| 基金项目： | 中央高校基本科研业务费专项资金资助项目(2009ZM0205); 国家大学生创新性实验计划资助项目(091056122) |
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| 摘 要： | 总结了氧化锌基TFT稳定性的最新研究进展,分析了栅偏压、栅绝缘层和背沟道影响TFT稳定性,尤其是阈值电压稳定性的主导机制.结果表明,氧化锌基TFT的不稳定性主要取决于陷阱缺陷态对可动载流子的俘获作用,以及新陷阱态的产生.总结了提高氧化锌基TFT稳定性的三种途径:降低栅偏压；提高沟道/栅绝缘层界面质量,降低缺陷态密度；钝化保护背沟道.
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| 关 键 词： | 氧化锌 薄膜晶体管 显示器件 |
Progress in Research on Stability of ZnO-Based Thin Film Transistor |
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| WU Weijing , XU Zhiping , YAN Jun , LAI Zhicheng. Progress in Research on Stability of ZnO-Based Thin Film Transistor[J]. Microelectronics, 2011, 41(6) |
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| Authors: | WU Weijing XU Zhiping YAN Jun LAI Zhicheng |
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| Affiliation: | WU Weijing,XU Zhiping,YAN Jun,LAI Zhicheng(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,P.R.China) |
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| Abstract: | Progress in research on stability of ZnO-based TFT in recent years was reviewed.Effects of gate bias voltage,insulator and back channel on stability of ZnO-based TFT were analyzed.Dominant mechanism of threshold voltage shift was discussed in particular,which was believed to be mainly caused by trapping charge and new defect states.As a result of the analysis,three ways were proposed to improve stability of ZnO-based TFT: 1) reducing gate bias voltage,2) improving quality of channel/insulator interface to d... |
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| Keywords: | ZnO TFT Display device |
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