Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range |
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| Authors: | L. Ya. Karachinsky N. Yu. Gordeev I. I. Novikov M. V. Maximov A. R. Kovsh J. S. Wang R. S. Hsiao J. Y. Chi V. M. Ustinov N. N. Ledentsov |
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| Affiliation: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Industrial Technology Research Institute,Hsinchu,Taiwan, ROC;3.Institut für Festk?rperphysik,Technische Universit?t Berlin,Berlin,Germany |
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| Abstract: | Light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77–300 K) at various driving current densities. The increase in indium content in InGaAsN solid solution results in a modification of the QW structure, which is manifested in the spontaneous formation of InGaAsN nanoclusters. These changes result in N-shaped temperature dependences of the threshold current density and slope efficiency. |
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