a Toplas Engineering, 1-9-9, Nishi-Tsutsujigaoka, Chofu, Tokyo, Japan
b Aoyama-Gakuin University, 6-16-1 Chitosedai, Setagaya-ku, Tokyo, Japan
Abstract:
We obtained an epitaxially grown free-standing diamond platelet utilizing epitaxial diamond film formed on a {100} iridium surface using a d.c. plasma CVD process. Iridium was selected as a suitable substrate material for the heteroepitaxy of diamond based on original criteria. Confocal Raman spectroscopy revealed that the diamond platelet contained little or no non-diamond carbon. The obtained diamond platelet is transparent to visible light and cleavable along the 110 direction on the surface. The angles between the top surface and the cross-sectional surfaces are approximately 55°, almost equal to the theoretical angle of 54.74° between {100} and {111} planes in cubic crystals. Therefore, the cross-sectional surfaces would be {111} planes of a typical facet for single-crystalline diamond. This means that the diamond platelet we have formed has relatively good crystallinity.