Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method |
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Authors: | D. D. Avrov S. I. Dorozhkin Yu. M. Tairov A. Yu. Fadeev A. O. Lebedev |
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Affiliation: | (1) St. Petersburg State Electrotechnical University, St. Petersburg, 197376, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings. |
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