| 湿法氧化工艺对VCSEL器件性能的影响 |
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| 引用本文： | 李海军,钟景昌,郝永琴,赵英杰,马建立. 湿法氧化工艺对VCSEL器件性能的影响[J]. 中国电子科学研究院学报, 2006, 1(4): 369-372 |
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| 作者姓名： | 李海军 钟景昌 郝永琴 赵英杰 马建立 |
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| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022;长春理工大学高功率半导体激光国家重点实验室,吉林,长春,130022 |
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| 摘 要： | 在精确控制气体流量、温度等条件下对样品进行了湿法氧化实验.在SEM下观察了高铝氧化层的微观结构.讨论了高铝氧化限制层中氧化产物体积收缩产生的多孔结构对氧化反应的作用,以及收缩应力对有源区的影响.分析了氧化后器件串联电阻变大的原因.综合考虑这些因素,结合器件结构优化氧化层的设计,制备出了阈值电流低的、性能优良的VCSEL器件.
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| 关 键 词： | 湿法氧化 垂直腔面发射激光器 尖晶石结构 应力 |
| 文章编号： | 1673-5692（2006）04-369-04 |
| 收稿时间： | 2006-06-13 |
| 修稿时间： | 2006-08-06 |
The Influence of Wet Oxidation for VCSELs' Charactors |
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| LI Hai-jun,ZHONG Jing-chang,HAO Yong-qin,ZHAO Ying-jie,MA Jian-li. The Influence of Wet Oxidation for VCSELs' Charactors[J]. Journal of China Academy of Electronics and Information Technology, 2006, 1(4): 369-372 |
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| Authors: | LI Hai-jun ZHONG Jing-chang HAO Yong-qin ZHAO Ying-jie MA Jian-li |
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| Abstract: | The wet oxidation experiment is carried out upon the sample under accurately controlled conditions such as carrier gas flow and temperature. Then we have observed the microstructure of the high aluminum oxidized layer through SEM. Also, we wish todiscuss the influence upon the oxidation reaction of porous structure caused by the volume contraction of the oxidation product in the high alu- minum oxidized layer, as well as the effect of contraction stress on the active region. Then we have analyzed the reason why the device series resistance increases after oxidation. Considering these factors comprehensively and the design of the device with optimized oxidized layer, we will make the low threshold current VCSEL with good performance. |
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| Keywords: | wet oxidation l vertical-cavity surface emitting laser spinel structure l compressive strain |
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