| 生长在GaSb_xP_（1－x）（001）衬底上GaP的能带结构 |
| |
| 引用本文： | 杨中芹,徐至中,张开明. 生长在GaSb_xP_（1－x）（001）衬底上GaP的能带结构[J]. 固体电子学研究与进展, 1996, 0(4) |
| |
| 作者姓名： | 杨中芹 徐至中 张开明 |
| |
| 作者单位： | 复旦大学李政道物理实验室 |
| |
| 摘 要： | 采用半经验紧束缚近似方法对生长在ＧａＳｂｘＰ１－ｘ（００１）衬底上ＧａＰ的电子能带结构进行计算。ＧａＰ为间接能隙型的半导体，计算表明，当衬底中Ｓｂ组分ｘ≥０．５７时，应变的ＧａＰ薄层由间接能隙变成直接能隙的半导体。因应变，ＧａＰ原来简并的最低Ｘ点导带能级及价带顶（Γ点）能级发生分裂。随着Ｘ增大，分裂值变大。文中最后计算了价带能级到导带底跃迁的振子强度，对发光效率作了讨论。
|
| 关 键 词： | 半经验的紧束缚近似，直接能隙，能带结构 |
Energy Band Structures of Thin Strained GaP Layer on GaSbxP1-x(001) Substrate |
| |
| Yang Zhongqin, Xu Zhizhong, Zhang Kaiming. Energy Band Structures of Thin Strained GaP Layer on GaSbxP1-x(001) Substrate[J]. Research & Progress of Solid State Electronics, 1996, 0(4) |
| |
| Authors: | Yang Zhongqin Xu Zhizhong Zhang Kaiming |
| |
| Abstract: | T he energy band structures of a thin strained GaP layer Oil GaSh.P1-x (001) substrate are calculated by the semi-empirical tight-binding method in the paper. The calculated results show that the thin strained GaP layer can change its feature from an indirect gap into direct gap if the composition x is larger than 0. 57. Due to deformation, the degeneration of the lowest conduction band at X point and the top of valence band(at P point)is destroyed. The splitting values increase with the composition x. Finally, oscillator strength between the valence band and the bottom of conduction band is calculated. The light emission efficiency is also discussed. |
| |
| Keywords: | Semi-empirical Tight-binding Method Direct Gap Band Structures |
| 本文献已被 CNKI 等数据库收录！ |
