Lateral association of vertically coupled quantum dots |
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| Authors: | A. F. Tsatsul’nikov A. Yu. Egorov A. E. Zhukov A. R. Kovsh V. M. Ustinov N. N. Ledentsov M. V. Maksimov B. V. Volovik A. A. Suvorova N. A. Bert P. S. Kop’ev |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The modification produced in the structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In0.5Ga0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies. Fiz. Tekh. Poluprovodn. 31, 851–854 (July 1997) |
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