Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation |
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Authors: | Anderson G W Chipman L E Kub F J Park D Frankel M Y Carruthers T F Modolo J A Hobart K D Katzer D S |
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Affiliation: | Naval Research Laboratory, Washington, D.C. 20375-5347, USA. |
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Abstract: | Gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodetectors have unique properties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al(0.3)Ga(0.7)As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was >/=29 GHz. |
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