| Te离子注入GaAs的穆斯堡尔谱研究 |
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| 引用本文： | 莫党.Te离子注入GaAs的穆斯堡尔谱研究[J].固体电子学研究与进展,1989,9(4):381-383. |
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| 作者姓名： | 莫党 |
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| 作者单位： | 中山大学物理系 |
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| 摘 要： | <正> 对GaAs注入施主型杂质离子Te(或Se,S),在高注入剂量下经高温退火后仍有大量注入原子不能电激活。过去,利用穆斯堡尔谱(简称MS)研究GaAs中Te有过一些工作。William-son等测量了LEP掺125Te的GaAs的MS,Schroyen等及Niesen等测量了129Te注入GaAs的MS,均发现经一定温度退火后GaAs中有相当多的Te不处在代位式。但对非代位式的原因有不同判断,曾提出过的模型有Ga2Te3沉淀、Te-空位组合体和TeASVGa对等。故此问题仍需进一步研究。
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| 关 键 词： | Te 离子注入 GaAs 穆斯堡尔谱 |
Study of Te Implanted GaAs by Mossbauer Spectroscopy |
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| Abstract: | For 110keV 119mTe + 1015 stable Te/cm2 Implanted and annealed at 600℃ GaAs samples, the Mossbauer spectra(MS) have been measured. Due to the two-step decay, this kind of MS is different from the ordinary MS and is time-dependent. The relative intensities of various lines have been analyzed as the functions of parameter ξ defined by us.The lines of MS have been identified. Our results ara compared with the previous data of MS of 125Te, 129Te and 119Sn in GaAs. The mechanism of the ron-substitutional Te and the environment of Te in GaAs have been discussed. |
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