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基于扫描近场光学显微镜的808nm半导体激光器腔面热特性分析
引用本文:饶岚,宋国峰,陈良惠.基于扫描近场光学显微镜的808nm半导体激光器腔面热特性分析[J].半导体学报,2010,31(10):104007-5.
作者姓名:饶岚  宋国峰  陈良惠
摘    要:摘要:本实验搭建了近场光学显微镜,通过扫描获得的激光器腔面图像,对激光器腔面的热特性进行了分析。通过对比两个激光器样品的前腔面形貌随着注入电流的变化,可以得出激光器与热导相关的热特性参数。通过对被测试激光器进行寿命测试,可以得出激光器的寿命与该热特性参数相关。这将可能为激光器寿命测试提供了一种新的非破坏性的测试方法。

关 键 词:近场扫描光学显微镜  半导体激光器  腔面  热分析  半导体激光二极管  近场光学显微镜  电流注入  无损检测
收稿时间:4/7/2010 7:58:51 AM
修稿时间:4/7/2010 7:58:51 AM

Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy
Rao Lan,Song Guofeng and Chen Lianghui.Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy[J].Chinese Journal of Semiconductors,2010,31(10):104007-5.
Authors:Rao Lan  Song Guofeng and Chen Lianghui
Affiliation:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with non-destructive tests.
Keywords:semiconductor laser  NSOM  thermal expansion
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