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Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
Authors:J. Her  H. Lim  C. H. Kim  I. K. Han  J. I. Lee  K. N. Kang  J. E. Kim  H. Y. Park
Affiliation:(1) Department of Electronic Engineering, Ajou University, 441-749 Suwon, Korea;(2) Optical Electronics Laboratory, Korea Institute of Science and Technology, 130-650 Seoul, Korea;(3) Department of Physics, Korea Advanced Institute of Science and Technology, 305-701 Taejon, Korea
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