Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs[MESFETs read MOSFETs] |
| |
| Authors: | Parke SA Hu C Ko PK |
| |
| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
| |
| Abstract: | A hybrid mode of device operation, in which both bipolar and MOSFET currents flow simultaneously, has been experimentally investigated using quarter-micrometer-channel-length MOSFET's which were fabricated on SIMOX silicon-on-insulator substrates. This mode of device operation is achieved by connecting the gate of a non-fully-depleted SOI MOSFET to the edges of its floating body. Both the maximum G m and current drive at 1.5× higher than the MOSFET's normal mode. Bipolar-junction-transistor (BJT)-like 60-mV/decade turn-off behavior is also achieved. This mode of operation is very promising for low-voltage, low-power, very-high-speed logic as well as for on-chip analog functions |
| |
| Keywords: | |
|
|
