串联电容式RF MEMS开关设计与制造研究

介绍了一种串联电容式RF MEMS开关的设计与制造。所设计的串联电容式RF MEMS开关利用薄膜淀积中产生的内应力使MEMS桥膜向上发生翘曲,从而提高所设计的开关的隔离度,克服了串联电容式RF MEMS开关通常只有在1GHz以下才能获得较高隔离度的缺点。其工艺与并联电容式RF MEMS开关完全相同,解决了并联电容式RF MEMS开关不能应用于低频段(<10GHz)的问题。其插入损耗为-0.88dB@3GHz,在6GHz以上,插入损耗为-0.5dB;隔离度为-33.5dB@900MHz、-24dB@3GH和-20dB@5GHz,适合于3~5GHz频段的应用。

Design and Fabrication of a Capacitive Series RF MEMS Switch

The design and fabrication of a capacitive series RF MEMS switch is reported.The up-electrode warps up under the residue stress,which increases the isolation of the capacitive series RF MEMS switch.The disadvantage of capacitive series RF MEMS switch,which only has high isolation at below 1 GHz,is overcome.The fabrication process is the same with capacitive shunt switch.Comparing with capacitive shunt switch,the fabricated capacitive series RF MEMS switch has the advantage in low frequency application(<10 GHz).The insertion loss is-0.8 dB@3 GHz and-0.5 dB above 6 GHz;the isolation is-33.5 dB@900 MHz,-24 dB@3 GHz and-20 dB@5 GHz,which is suit for the application of frequency range from 3 GHz to 5 GHz.