Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs |
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| Authors: | H. Takeda N. Mori C. Hamaguchi |
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| Affiliation: | (1) Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita City, Osaka, 565-0871, Japan |
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| Abstract: | A full-band Monte Carlo simulation of two-dimensional electron gas is performed to study effects of the non-parabolicity of the energy band structure on the phonon-limited electron mobility in SOI MOSFETs with a thin Si-layer. |
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| Keywords: | SOI MOSFET pseudo-potential method energy band structure Monte Carlo simulation |
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