| 功率半导体器件的场限环研究 |
| |
| 引用本文： | 遇寒, 沈克强,.功率半导体器件的场限环研究[J].电子器件,2007,30(1):210-214. |
| |
| 作者姓名： | 遇寒 沈克强 |
| |
| 作者单位： | 东南大学MEMS教育部重点实验室,南京,210096;东南大学MEMS教育部重点实验室,南京,210096 |
| |
| 摘 要： | 分析了场限环结构原理,总结了影响击穿电压的相关因素.采用圆柱坐标对称解进行分析,讨论了给定击穿电压情殚况下场限环结构的电场分布和峰值电场表达式及各种确定场限环个数的方法的.最后用流行的2-D半导体器件模拟工具MEDICI对器件终端进行相关模拟,尤其是表面电荷对带场限环的击穿电压和优化环间距的影响做了大量的分析模拟.得出的结论与文献中的数值模拟结果相符合,对设计优化场限环有一定的指导性.
|
| 关 键 词： | 功率半导体 击穿电压 场限环 环间距 MEDICI表面电荷 |
| 文章编号： | 1005-9490（2007）01-0210-05 |
| 修稿时间： | 2006-01-22 |
Research of FLR of Power Semiconductor Device |
| |
| YU Han,SHEN Ke-qiang.Research of FLR of Power Semiconductor Device[J].Journal of Electron Devices,2007,30(1):210-214. |
| |
| Authors: | YU Han SHEN Ke-qiang |
| |
| Affiliation: | Key Laboratory of MEMS of Ministry of Education, Southeast University , Nanjing 210096, China |
| |
| Abstract: | The field limting ring (FLR) termination structure theory is analysed, the related factors that influence breakdown voltage are summarized. Based on the cylindrical symmertric solution ,predicting the distribution of the ring ,voltage edge peak field and the various method how to make sure the number of FLR are also discussed. By using the popular 2-D semiconductor device simulator, device termination structure with FLR is simulated and analysed, especially the influence of surface charges on breakdown voltage and optimal spacing of ring to ring . The analytic conclusions and the simulated results reach a good agreement. Previous results is helpful to design and optimize the field limting ring (FLR) |
| |
| Keywords: | power semiconductor breakdown voltage Field Limting Ring (FLR) ring spacing MEDICI surface charge |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子器件》浏览原始摘要信息 |
|
点击此处可从《电子器件》下载全文 |
|
