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Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers |
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| Authors: | T. Shimura K. Fukuda T. Hosoi |
| Affiliation: | a Department of Material and Life Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan b Department of Electronics and Information Systems, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan c Department of Management Science, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8585, Japan |
| Abstract: | The ordered SiO2 in the buried oxide (BOX) layer of high-dose, low-dose, and internal-thermal-oxidation (ITOX) separation-by-implanted-oxygen (SIMOX) wafers was investigated by X-ray diffraction. From the results, it was found that the SiO2 molecules in the low-dose and ITOX SIMOX wafers are better ordered than those in the high-dose SIMOX wafer and that the ordered structure of the ITOX layer is different from that of the originally formed BOX layer, suggesting that the ITOX layer has a structure similar to that of the ordered SiO2 in the thermal oxide layer. |
| Keywords: | 61.10.Nz 68.55.Jk |
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