Detection limits for glow discharge mass spectrometry (GDMS) analyses of impurities in solar cell silicon |
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| Affiliation: | 1. Mechanical Engineering Department, Superior National School of Technology, ENST SNVI National Road N°. 5, ZI, ROUIBA, Algiers, Algeria;2. Numerical Modeling and Instrument in Soil-Structure Interaction Laboratory (MNIISS), University of Biskra, 07000 Biskra, Algeria;1. Department of Mathematics, Khorasgan Branch, Islamic Azad University, Khorasgan, Isfahan, Iran;2. Department of Mathematics, Mobarakeh Branch, Islamic Azad University, Mobarakeh, Isfahan, Iran;3. Department of Science, Bushehr Branch, Islamic Azad University, Bushehr, Iran;1. CCCC Highway Consultants Co., Ltd., Beijing 100088, PR China;2. CCCC Highway Bridges National Engineering Research Centre Co., Ltd., Beijing 100088, PR China;3. Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, PR China;1. School of Industrial Engineering, Purdue University, 315 N Grant St, West Lafayette, IN 47907, USA;2. Clinical Support Group, Roche Diagnostics Corporation, 9115 Hague Rd, PO Box 50547, Indianapolis, IN 46250, USA;3. Department of Laboratory Medicine & Pathology, Mayo Clinic, 200 First St SW, Rochester, MN 55904, USA |
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| Abstract: | The measurement of both doping elements and trace elements in solar cell silicon plays a key role for achieving high conversion efficiency of the solar cell device. Doping element concentrations in the range of few hundreds part per billions (ppb) and trace elements in the ppb or sub-ppb concentration range are typically present in multicrystalline silicon wafers for solar cells. Accurate and reliable measurements of these small amounts are not straightforward. The present work describes a fast-flow direct-current high resolution glow discharge mass spectrometer (GDMS). Detection limits for a number of impurities (B, Al, P, Ca, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Mo, Sn, W and Pb) of interest for solar cell applications have been investigated by GDMS. These detection limits are approximately 1 ppba or below, except for B, Al, P, Ca and Pb. All concentrations reported are quantitative since calculated relative sensitivity factors (RSF‘s) for Si matrix have been used. The detection limits have been achieved with minimum sample preparation and short analysis time. |
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| Keywords: | Silicon Impurities Glow discharge Mass spectrometry Solar cells |
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