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A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots
Authors:Takeshi Kondo  Sang Min Lee  Michal Malicki  Benoit Domercq  Seth R. Marder  Bernard Kippelen
Abstract:We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 104. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.
Keywords:Nonvolatile organic memory  Data storage  Metal nanoparticles  Silver  Metal nanodots
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