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Characteristics of MSM photodetector fabricated on porous In0.08Ga0.92N
Affiliation:1. Department of Electrical Engr., Inha University, Incheon, Republic of Korea;2. Department of Electrical Engr., Konkuk University, Seoul, Republic of Korea;1. Dept. ELEC, Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussels, Belgium;2. University of Gävle, Kungsbäcksvägen 47, 801 76 Gävle, Sweden;3. Dept. SURF, Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussels, Belgium;1. WorleyParsons Canada, Edmonton Operations, Canada;2. Department of Mechanical Engineering, University of Alberta, Canada;1. SELECT, VIT University, Chennai Campus, Vandalur-kelambakam road, Chennai 600127, India;2. SMBS, VIT University, Chennai Campus, Vandalur-kelambakam road, Chennai 600127, India;3. Sri Subramanya College of Engineering and Technology, Palani 624615, India;1. Institute of Clinical Physiology, National Council of Research, via G. Moruzzi 1, 56124 Pisa, Italy;2. Fondazione G. Monasterio CNR – Regione Toscana, via G. Moruzzi 1, 56124 Pisa, Italy;3. Department of Information Engineering, University of Pisa, via Diotisalvi 2, 56126 Pisa, Italy
Abstract:In this study, nanoporous structures of In0.08Ga0.92N thin films were synthesized using anodic etching at various etching durations. The metal–semiconductor–metal photodetectors subsequentaly have been fabricated by depositing a high work function metal (Pt) on the thin films. Results show that the responsivity of the detector increased with increasing the etching duration to reach to the maximum value at 15 min. Moreover, the rise and recovery times of the device were investigated at 390 nm chopped light.
Keywords:Porous InGaN  Current–time measurements  III–V SMS photodetector
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