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Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices
Affiliation:1. Aix-Marseille Université, IM2NP, UMR 7334 CNRS, 38 Avenue Joliot-Curie, 13451 Marseille Cedex 20, France;2. Université Nice-Sophia Antipolis, EPIB, Polytech’ Nice Sophia, 1645 route des Lucioles, 06410 Biot, France;3. EMMAH UMR 1114 INRA-UAPV, 33 rue Louis Pasteur, Avignon, France;4. ST MICROELECTRONICS, ZI Rousset, 13100 Rousset, France;1. Department of Biomedical Engineering, Sri Ramakrishna Engineering College, Coimbatore, India;2. Department of Electronics and Communication Engineering, SNS College of Technology, Coimbatore, India;3. Department of Electronics and Instrumentation Engineering, Sri Ramakrishna Engineering College, Coimbatore, India;1. School of Electrical and Automation Engineering, Hefei University of Technology, Hefei 230009, PR China;2. School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, PR China;1. Frantsevich Institute for Problems of Materials Science of NASU, 3, Krzhyzhanovsky Str., Kyiv 03142, Ukraine;2. National Nanotechnology Laboratory, Al-Farabi Kazakh National University, 71, Al-Farabi Str., Almaty 050040, Kazakhstan;3. International Association for Hydrogen Energy, 5794 SW 40 Street #303, Miami, FL 33155, USA;4. HySa Systems Competence Centre, South African Institute for Advanced Materials Chemistry, University of Western Cape, South Africa;1. Department of Production Technology, MIT Campus, Chromepet, Anna University, Chennai, Tamil Nadu 600044, India;2. Department of Mechanical Engineering, CEG Campus, Guindy, Anna University, Chennai, Tamil Nadu 600025, India;1. State Key Laboratory of Information Engineering in Surveying, Mapping and Remote Sensing, Wuhan University, Wuhan, Hubei 430079, China;2. Shenzhen Key Laboratory of Spatial-temporal Smart Sensing and Services, Shenzhen University, Shenzhen, Guangdong 518052, China;3. School of Geodesy and Geodetics, Wuhan University, Wuhan, Hubei 430079, China
Abstract:A new experimental setup used to perform non-destructive measurement of electrical quantities on semiconductor devices is described in this paper. The particular case of tunneling current measurement in n-type semiconductor–oxide–semiconductor (SOS) capacitors, whose dielectrics play a crucial role in non-volatile memories, has been investigated. When the gates of such devices are polarized with a sufficient bias voltage while the other terminals are grounded, tunnel conduction of electrons through the thin oxide layer is allowed. Typical tunneling current measurements obtained with this advanced setup are presented and compared to the results yielded by older standard experimental protocols. An application to the experimental observation of the temperature dependence of the tunneling current is proposed. Conclusions about the benefits of this kind of electrical measurements are then drawn.
Keywords:Electrical measurements  Semiconductor devices  Non-destructive measurements  Transient measurements  Tunneling currents  Non-volatile memory
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