Theory for passive mode-locking in semiconductor laser structuresincluding the effects of self-phase modulation, dispersion, and pulsecollisions |
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Authors: | Koumans RGMP Van Roijen R |
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Affiliation: | Philips Optoelectron. Centre, Eindhoven; |
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Abstract: | We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other mode-locking parameters, like pulse width and pulse energy, are determined by the mode-locking system. System parameters, like bandwidth, dispersion, and self-phase modulation are shown to play an important role in mode-locking conditions and results. We also discuss the effects of pulse collisions and positions of the mode-locking elements inside the cavity on mode-locking stability and show that these effects can be easily included in the presented model. Finally, we give a number of design rules and recommendations for fabricating passively mode-locked lasers |
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