Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures |
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| Authors: | Cynthia M. Hanson Ricardo Basco Farid Agahi Kei may Lau R. T. Lareau T. P. Monahan |
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| Affiliation: | (1) Naval Command Control Ocean Surveillance Center RDTE DIV 555, 92152-5000 San Diego, CA;(2) Department of Electrical and Computer Engineering, University of Massachusetts, 01003 Amherst, MA;(3) U.S. Army Research Laboratory, Electronic and Power Sources Directorate, 07703-5601 Fort Monmouth, NJ |
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| Abstract: | Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike. |
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| Keywords: | AlGaAs/GaAs epilayer/substrate interface low pressure organometallic vapor phase epitaxy |
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