Relation between thermal conductivity,sintering mechanism and microstructure of AIN with yttrium aluminate grain boundary phases |
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| Authors: | W E Lee S -K Chiang D W Readey R Donn P T B Shaffer |
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| Affiliation: | (1) Department of Materials Science and Engineering, Ohio State University, Watts Hall, 43210 Columbus, OH, USA;(2) Present address: School of Materials, University of Sheffield, Sheffield, UK;(3) Present address: Gould Electronics Inc., Cleveland, OH, USA;(4) Present address: Department of Metallurgy and Materials Engineering, Colorado School of Mines, Golden, CO, USA;(5) Advanced Refractory Technologies, Inc., 699 Hertel Ave Buffalo, 14207, NY, USA |
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| Abstract: | High thermal conductivity, polycrystalline, AIN ceramics are being considered as microelectronic packaging materials. Careful microstructural characterization of AIN with various Y2O3 contents has been used to determine the particular yttrium aluminate second phases formed on sintering. The presence and morphology of the aluminates explains the variation of thermal conductivity with Y2O3 content and gives an indication of the sintering mechanism. |
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